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Home > Success Cases > GaN Epi Wafer > Power HEMT & RF GaN on SiC Epi Wafer

Power HEMT & RF GaN on SiC Epi Wafer

Project Description

We provide high-quality GaN-on-SiC for demanding Power HEMT and RF applications.

• Key Features: D-Mode, E-Mode, and RF Structures
• Available Sizes: 4", 6", and 8" Wafers
• Our Value: Proven epitaxial expertise that ensures performance and reliability for industry leaders.

Connect with us to innovate with confidence.

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M.P: +86-15366208370 ; +86-15366203573
E-mail: kim@homray-material.com;tina@homray-material.com
HMT Silicon Carbide (SiC) Wafer Website: www.sicwafer-hmt.com