
Power HEMT & RF GaN on SiC Epi Wafer
Project Description
We provide high-quality GaN-on-SiC for demanding Power HEMT and RF applications.
• Key Features: D-Mode, E-Mode, and RF Structures
• Available Sizes: 4", 6", and 8" Wafers
• Our Value: Proven epitaxial expertise that ensures performance and reliability for industry leaders.
Connect with us to innovate with confidence.




