u-GaN Cap On SiC For Power HEMT Supplier

Homray Material Technology manufactures GaN-on-SiC and GaN-on-Si Epitaxial wafer and supplies these GaN Epi Wafers to integrated device manufacturers to create high performance power and RF devices.Our GaN-on-SiC Epi Wafer can be divided into  Power HMET structure and RF HEMT structure. 4 inch and 6 inch both available in HMT and each layer structure can be customized.

GaN Epi Wafer Application
RF applications such as power amplifier
Vehicle power devices
Power electronics such as power supplies, DC/DC converter, etc.
Environment resistant devices

Standard Layer Specification For Power HEMT


Standard Layer Structure