4/6/8 inch GaN on Si Epi Wafer Manufacturer

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap

Product Description

As a premier GaN Epi Wafer Manufacturer, we deliver advanced 4-inch, 6-inch, and 8-inch GaN-on-Si Epi Wafers include D-Mode/E-Mode and RF structure tailored for high-frequency, high-power applications. Our epitaxial solutions are engineered to meet the demands of next-generation technologies, including 5G infrastructure, electric vehicles, and renewable energy systems.

Key Offerings:

Multi-Size GaN-on-Si Epi Wafers
- 4-inch: Ideal for R&D and specialized RF applications, offering cost-effective prototyping for emerging technologies.
- 6-inch: Optimized for mass production of power electronics and RF devices, balancing performance and scalability.
- 8-inch: Designed for high-volume manufacturing, reducing costs while maintaining superior thermal and electrical properties for automotive and industrial markets.

Optoelectronics

Representative Applications: LEDs, lasers, photodetectors

Key Advantages: High luminous efficiency, high brightness, long lifespan

Implementation Scenarios: Lighting, displays, automotive headlights, communication signal lights, medical devices

GaN-based LEDs have become the material of choice for high-performance lighting equipment due to their superior performance.

Radio Frequency (RF) Applications

Representative Applications: 5G communication base stations, satellite communications, military radar

Key Advantages: High power density, high frequency, high efficiency

GaN RF devices are becoming a critical foundation for 5G wireless communication infrastructure and defense systems.

Power Electronics

Representative Applications: Fast-charging devices, new energy vehicles, photovoltaic inverters, power management systems

Key Advantages: Low energy consumption, high switching speed, high power density

For example, in fast-charging technology, GaN power devices significantly improve charging efficiency while reducing heat generation and energy consumption.

High-Frequency Microwave Devices

Representative Applications: High-power amplifiers, power switches, radar systems

Key Advantages: High-frequency performance, high voltage resistance, high-temperature tolerance