HEMT GaN On SiC Epi Wafer Manufacturers

As a professional GaN Epi Wafer manufacturer, we specialize in advanced GaN-on-SiC epitaxial wafer solutions for high-power HEMT applications. Our products includes 4-inch and 6-inch wafers with both D-Mode (depletion-mode) and E-Mode (enhancement-mode) configurations:

• D-Mode GaN-on-SiC: Available with SiN cap layer or GaN cap layer for optimized high performance and thermal stability.

• E-Mode GaN-on-SiC: Features a p-GaN cap layer design for enhanced safety and switching efficiency in power electronics.
   
  

  Based on electrical properties, SiC substrates can be classified into two types:

  1. Semi-insulating SiC substrates – Characterized by high resistivity (≥10⁵ Ω·cm), used for high-frequency and high-power RF applications.

  2. Conductive SiC substrates – Feature low resistivity (15–30 mΩ·cm), primarily employed in power electronics.
     
     

   

  Our GaN-on-SiC epitaxial wafers, grown on semi-insulating SiC substrates, enable the fabrication of high-performance HEMTs (High-Electron-Mobility Transistors) and other microwave/RF devices. 

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Meanwhile, We provide fully customizable epitaxial structures, including layer thickness, doping profiles, and stress engineering. Our technical team collaborates closely with clients to:

1. Optimize wafer parameters for specific applications (e.g., 5G基站, radar systems, EV charging).