GaN Epitaxial(Epi) Wafer Manufacturer and supplier氮化镓衬底生产商

RF GaN on HR Si Epi Wafer Supplier

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
GaN Cap AlGaN on Si Epi Wafer Supplier

GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Cap Thickness: 0-5nm
GaN On Si Epi Wafer Power HEMT Manufacturer

GaN-On-Si Epi Wafer For Power HEMT-D Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
硅基氮化镓外延片-D-Mode耗尽型

硅基氮化镓外延晶片
硅衬底尺寸: 4/6/8 inch
硅衬底厚度: 675um 1000um
保护层: GaN/SiN
E-HEMT GaN On Si Epi Wafer Manufacturer

GaN-On-Si Epi Wafer For Power HEMT-E Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
硅基HEMT氮化镓外延片E-Mode增强型

硅基氮化镓外延晶片
硅衬底尺寸: 4/6/8 inch
硅衬底厚度: 675um 1000um
结构类型：E-Mode(增强型)
p-Cap GaN HEMT On Si Epi Wafer Supplier Mg

GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Buffer Layer: 2-3um
8 inch GaN-On-Si Epitaxy Wafer Manufacturer

GaN-On-Si Epi Wafer
Substrate Size: 8 inch
Substrate Thickness: 1000um
GaN Buffer Layer: 2-3um
D-HEMT AlGaN/GaN On Si Epi Wafer Supplier

GaN-On-Si Epi Wafer
Substrate Size: 4/6/8 inch
Substrate Thickness: 675um 1000um
GaN Buffer Layer: 2-3um
4/6/8 Inch GaN On Si Epi Wafer Manufacturer

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap
4inch RF GaN Epitaxy On Si Wafer Supplier

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap
u-GaN Cap On SiC For Power HEMT Supplier

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
D-Mode/E-Mode GaN On SiC Epi Wafers

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Cap Layer: 2.5-3.5nm
GaN Epi Wafer Manufacturer GaN On SiC/GaN on Si

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 500um
Cap Layer: SiN or GaN
Mg Doped p-GaN Epitaxy Wafer Supplier

p-GaN on SiC/ p-GaN on Si
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 500um/675um
p-GaN Cap Layer: 90-100nm
HEMT GaN On SiC Epi Wafer Manufacturers

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Type: D-Mode or E-Mode

Home<<1 2 >>Last