Mg Doped p-GaN Epitaxy Wafer Supplier

HMT company produces p-GaN on SiC and p-GaN on Si Epi Wafer to worldwide semiconductor companies and research labs. We supply 4'' 6'' and 8'' pGaN Epi Wafers and support customization.

The enhanced-mode p-GaN gate HEMT achieves intrinsic normally-off operation by incorporating a p-type GaN layer in the gate region of the AlGaN/GaN heterostructure. This design enables complete device turn-off at zero to negative bias, making it an ideal solution for high-voltage, high-power applications.

Compared to conventional D-mode devices, the E-mode p-GaN HEMT demonstrates superior performance in:

• Threshold gate voltage characteristics

• Switching performance

• Operational reliability

Furthermore, its MOSFET-like driving mechanism significantly simplifies system design requirements.

 

With the GaN device market rapidly expanding, enhanced-mode p-GaN HEMTs are becoming the technology of choice for:

• Electric vehicles (EVs)

• Solar inverters

• Data center power systems

• 5G base station RF frontends
  
  

Emerging dielectric and ferroelectric layers are expected to further enhance threshold voltage control and reliability, unlocking new innovations in GaN power devices.