p-Cap GaN HEMT On Si Epi Wafer Supplier Mg

Get high quality of pGaN HEMT On Si Wafers From HMT GaN/Si Epitaxy Wafer Manufacturer Supplier With a favourable price Both RF structure, D/E -mode structure are available in HMT. We can offer the best prices on the market for high quality GaN Epi-wafers.  Customers from all over the world have trusted HMT as their preferred manufacturer of GaN-on-Si epi-wafers .

GaN-on-Si Epi wafer application and structure




GaN is known as the "ultimate semiconductor material", can be used to manufacture a wide range of uses, powerful performance of a new generation of microchips, belong to the so-called wide-bandgap (gallium nitride bandgap width is 3.4 eV electron volt) semiconductor, is the development of high efficiency, high power microelectronics, optoelectronic devices of new semiconductor materials.

Compared to silicon or other devices, gallium nitride is faster and therefore can achieve higher power density. For a given power level, GaN has the advantage of small size. With smaller devices, the device capacitance can be reduced, making the design of higher bandwidth systems easier.