2 Inch Pure GaN Wafer Supplier

HMT foucs on providing high quality Free-standing GaN Substrate Wafer with 2 inch diameter 50.8mm. We have D grade R grade and P grade for different applications. The thickness of pure GaN substrate wafer is 400um±25um and dopant type is un-doped N type. We also have Si-doped N type GaN Wafers.

The basic spec of Free standing GaN Wafer:
Grade: D grade R grade and P grade
Diameter: 50.8±0.2mm
Thickness：400±25um
Orientation：c-plane(0001) off angle toward Maxis 0.35+0.15°
OF:16+1 mm (1-100)
lF:8±1 mm (11-20)
Ga face:RMS <0.3 nm(10x10um)
Resistivity(300k): ≤0.02 0.cm

Picture of 2 inch GaN Substrate Wafers:

As a third-generation semiconductor material, gallium nitride (GaN) occupies an important position in the modern semiconductor industry due to its excellent physical properties such as wide band gap and high thermal conductivity. These characteristics not only make gallium nitride in electronic power, RF microwave and other fields have a wide range of applications, such as fast chargers, transistors and RF microwave devices, but also because of its high temperature resistance, radiation resistance performance, become the ideal choice for manufacturing high-performance electronic devices. With the continuous progress of science and technology, devices based on gallium nitride are gradually replacing traditional semiconductor products, showing great development potential and application prospects.