2 Inch GaN-On-Sapphire Template Wafer Manufacturer

As the professional GaN Wafer Manufacturer in China, HMT can produce 2 inch and 4 inch GaN on Sapphire Wafer, also called GaN templates. We use 430um thickness sapphire substrate, 4.5um thickness un-doped GaN layer.The resistivity of 2 inch GaN on Sapphire template is <0.5ohm.cm, mobility ~300cm²/V.s. We always provide bottom price for customers.

A composite structure composed of a gallium nitride single crystal thin film material and its supporting substrate is used as a gallium nitride substrate for post-sequence process operations such as epitaxial deposition, diffusion, and ion implantation.


Due to the high melting point of the GaN material itself and the need for high pressure environment, it is difficult to use the melting crystallization technology to make GaN substrate. At present, GaN substrate is mainly grown on the sapphire substrate to make GAN substrate, and then the substrate and gallium nitride thick film are separated by stripping technology. The separated gallium nitride thick film can be used as the epitaxial substrate. The previous mainstream of this substrate was 2 inches, and now there are 4 to 6 inches of substrate, and the advantage is that the dislocation density is significantly low

In semiconductors, gallium nitride (GaN) is a very strong and mechanically stable wide-gap semiconductor material. Due to its higher breakdown strength, faster switching, higher thermal conductivity and lower on-resistance, gallium nitride based power devices are significantly superior to silicon-based devices and can be used to manufacture semiconductor power devices, radio frequency components and light emitting diodes (leds).