GaN-On-Sapphire Wafer Manufacturer_GaN Substrate Supplier_氮化镓衬底厂家

p-Cap GaN HEMT On Si Epi Wafer Supplier Mg

GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Buffer Layer: 2-3um
8 inch GaN-On-Si Epitaxy Wafer Manufacturer

GaN-On-Si Epi Wafer
Substrate Size: 8 inch
Substrate Thickness: 1000um
GaN Buffer Layer: 2-3um
D-HEMT AlGaN/GaN On Si Epi Wafer Supplier

GaN-On-Si Epi Wafer
Substrate Size: 4/6/8 inch
Substrate Thickness: 675um 1000um
GaN Buffer Layer: 2-3um
4/6/8 Inch GaN On Si Epi Wafer Manufacturer

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap
4inch RF GaN Epitaxy On Si Wafer Supplier

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap
u-GaN Cap On SiC For Power HEMT Supplier

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
D-Mode/E-Mode GaN On SiC Epi Wafers

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Cap Layer: 2.5-3.5nm
GaN Epi Wafer Manufacturer GaN On SiC/GaN on Si

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 500um
Cap Layer: SiN or GaN
Mg Doped p-GaN Epitaxy Wafer Supplier

p-GaN on SiC/ p-GaN on Si
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 500um/675um
p-GaN Cap Layer: 90-100nm
HEMT GaN On SiC Epi Wafer Manufacturers

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Type: D-Mode or E-Mode
Power HEMT GaN On SiC Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Cap Layer: GaN or SiN
AlGaN/GaN On SiC HEMT Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness:500um
Substrate Type: 4H-SI
4英寸碳化硅基氮化镓外延片

碳化硅基氮化镓外延片
衬底尺寸: 4英寸，6英寸
衬底厚度: 500um
衬底类型：4H-SI半绝缘
GaN On SiC Epi Wafer RF HEMT Manufacturer

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
4 Inch RF HEMT GaN-On-SiC Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘

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