GaN-On-Sapphire Wafer Manufacturer_GaN Substrate Supplier_氮化镓衬底厂家_氮化镓衬底厂商

GaN On Sapphire Epi Wafer Supplier For HEMT

GaN-On-Sapphire Epi Wafer For Power/RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire
HMT65D100T30BS 650V GaN HEMT Supplier

GaN HEMT Chip Class Wafer
D-Mode With Vds＞650V
Id 21A & Rdson 100 mohm
Sawing Wafer With Bare Die
HMT65E160T30BS GaN Chip On Wafer

GaN HEMT Chip On Wafer
E-Mode With Vds＞650V
Id 11A & Rdson 160 mohm
Sawing Wafer With Bare Die
HMT65E300T30BS GaN HEMT Wafer Manufacturer

GaN HEMT Wafer
E-Mode With Vds＞650V
Id 8A & Rdson 300 mohm
Sawing Wafer With Bare Die

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