GaN-On-Sapphire Wafer Manufacturer_GaN Substrate Supplier_氮化镓衬底厂家

p-Cap GaN HEMT On Si Epi Wafer Supplier Mg

GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Buffer Layer: 2-3um
8 inch GaN-on-Si Epitaxy Wafer Manufacturer

GaN-On-Si Epi Wafer
Substrate Size: 8 inch
Substrate Thickness: 1000um
GaN Buffer Layer: 2-3um
D-HEMT AlGaN/GaN on Si Epi Wafer Supplier

GaN-On-Si Epi Wafer
Substrate Size: 4/6/8 inch
Substrate Thickness: 675um 1000um
GaN Buffer Layer: 2-3um
4/6/8 inch GaN on Si Epi Wafer Manufacturer

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap
4inch RF GaN Epitaxy on Si Wafer Supplier

Type: D-Mode/E-Mode/RF
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Cap Layer: SiN or GaN Cap
u-GaN Cap On SiC For Power HEMT Supplier

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
D-Mode/E-Mode GaN on SiC Epi Wafers

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Cap Layer: 2.5-3.5nm
HEMT GaN On SiC Epi Wafer Manufacturers

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Type: D-Mode or E-Mode
Power HEMT GaN on SiC Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Cap Layer: GaN or SiN
AlGaN/GaN On SiC HEMT Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness:500um
Substrate Type: 4H-SI
4英寸碳化硅基氮化镓外延片

碳化硅基氮化镓外延片
衬底尺寸: 4英寸，6英寸
衬底厚度: 500um
衬底类型：4H-SI半绝缘
GaN On SiC Epi Wafer RF HEMT Manufacturer

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
4 inch RF HEMT GaN-on-SiC Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
GaN On Sapphire Epi Wafer Supplier For HEMT

GaN-On-Sapphire Epi Wafer For Power/RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire

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